Condensed Matter/Materials & Biological Physics Seminar with Dmitry Shcherbakov on High charge density and displacement field in graphene and InSe

Modern two-dimensional (2D) materials manifest a broad range of electronic properties and offer their high tunability. In field-effect transistors, charge density and out-of-plane displacement field can be controlled independently. Moreover, stronger doping unachievable electrostatically can be induced in heterostructures by combining different 2D materials. We utilize these advantages to populate the second subband for electrons in γ-InSe purely electrostatically, and for holes in bilayer graphene by combining gating and proximity with two-dimensional α-RuCl3. In InSe, we demonstrate electrostatic tunability of both intersubband energy and spin-orbit coupling. Additionally, we detect correlated states at high displacement fields in twisted graphene.

This lecture was made possible by the William C. Ferguson fund.