(Special Seminar) Optical Properties of Silicon Vacancies in 4H-SiC

Dr. Hunter Banks (hosted by Kater Murch), Naval Research Laboratory, Washington, D.C.
April 6, 2018 at 11:00 am
241 Compton
Event Description 

Defect states in wide bandgap materials have generated substantial interest in the past twenty years as promising systems for quantum information and quantum sensing because of their optical and spin properties. Recent work has found many promising SiC defect states, and so, coupled with the rapid maturation of SiC processing technology, SiC has become an attractive material for potential photonic and spintronic applications. The silicon vacancies in 4H-SiC are particularly interesting defects for near-infrared quantum optics, and we focus on V2 defect, which shows long spin coherence times even at room temperature. We present high-resolution optical spectroscopy of single defects to better understand their emission properties and energy level structure. We show that the optical linewidths are narrow and resolve the fine structure of the excited state, which has significant differences compared to other commonly studied defects. We also show the importance of the Jahn-Teller effect to the optical selection rules. This refined understanding of the optical transitions paves the way for precision quantum optical control of spins and photons.

 

Coffee:  10:45 am, 241 Compton